Trench MOS Power Schottky in Low Profile DFN - ST2060DJF

Date:May 17, 2016
Visits:254

The ST2060DJFis a Trench MOS Schottky rectifier with an ultralow low forward voltage, low reverse leakage current and very fast reverse recovery times.  The result is a Schottkyrectifier that has extremelylow total conduction losses and negligible switching losses. The device is packaged in a very low profile 5x6mm DFN package that makes it ideal for space constrained applications that require an energy efficient power Schottky rectifier.

Features

   Extremely low forward voltage for maximum efficiency

   High current density (20A in 5x6mm package)

   Low profile package (1mm) for space constrained applications

   High forward surge capability (150A) needed for capacitive loaded circuits

   Theoretically zero reverse recovery time, trr, minimizes switching losses at high frequency    

    Pb-Free, Halogen Free, RoHS/WEEE Compliant

 

Applications

   High frequency Switch Mode Power Supplies (SMPS)

   Reverse polarity protection

   DC / DC converters

   ORing diode



ST2060DJF N1587 REV.-.pdf

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