The SICR10650 is a 650V Silicon Carbide (SiC) rectifier device available in the industry standard TO-220AC package outline. The SICR10650 provides extremely fast Schottky reverse recovery times that are independent of temperature extremes. The device has a high continuous forward current rating as well as a very high single cycle (8.3ms) forward surge capability. Additionally, total conduction losses are minimized as result of low forward voltage and very low reverse leakage current. The combination of low switching loss, low conduction loss and high voltage capability makes the SICR series the ideal high voltage rectifier for high frequency, energy sensitive applications where temperature extremes are expected.
Features
• High reverse voltage capability of 650V
• Continuous forward current capability of 10A (TC=150oC, 50% D/C)
• Reverse recovery time virtually independent of temperature change
• Low total conduction losses (VF=1.5V, IR=25 μA, typical at TJ=25oC)
• Half sine wave (8.3ms) forward surge rating of 110A needed for reactively loaded circuits
• Maximum junction operating temperature of 175oC
• Industry standard package outlines for design flexibility
Applications
• Bypass diode for solar energy micro-inverters
• Flyback diode in high frequency switching circuits
• Power Factor Correction (PFC)
• Free-wheeling diodes
• Output rectification of high frequency power supplies
Support Material
Data Sheet
