Applications


‌200W-500W SMPS

‌Detailed Analysis of 200W-500W General-Purpose Switching Power Supplies:

Working Principle

‌Switching power supplies achieve power conversion through high-frequency switching operations. The core process consists of four stages:
‌Rectification & Filtering:‌ AC line voltage (50/60 Hz) is converted to high-voltage DC (typically 300V-400V) via a bridge rectifier and filtered by electrolytic capacitors.
‌High-Frequency Inversion:‌ This DC voltage is chopped into a high-frequency square wave using MOSFETs or IGBTs switching at frequencies between 20 kHz and 200 kHz.
‌Energy Transfer:‌ A high-frequency transformer provides voltage transformation and galvanic isolation, inducing the target voltage on its secondary winding(s).
‌Secondary Rectification:‌ The transformed AC is rectified using either synchronous rectifiers or diodes, followed by LC filtering to deliver a stable DC output.
‌Power supplies in this range predominantly employ PWM control technology (utilizing ICs like TL494 or SG3525). A feedback loop dynamically adjusts the duty cycle to maintain stable output voltage, achieving typical efficiencies of 85% to 92%.

Topology Architecture In-Depth Analysis

‌‌‌(A) Comparison of Predominant Topologies

Fly-back Topology:‌

  • oSuitable for cost-sensitive applications below 200W; extending to ~300W requires Interleaved Flyback configurations.
  • Key Characteristics:
  • Simple single-switch structure; transformer functions as both isolator and energy storage inductor.

    Inherent short-circuit protection capability.

    Voltage spikes induced by leakage inductance necessitate RCD snubber circuits.

‌‌Forward Topology:‌

  • oPrimary solution for 300W-500W applications.
  • Defining Features:
  • Requires mandatory magnetic reset circuitry (third winding or Active Clamp).

    Offers higher power transfer efficiency compared to Fly-back.

    Lower output ripple, making it suitable for precision loads.

‌‌Half-Bridge LLC Resonant Topology:‌

  • Preferred choice for high-end 500W applications.
  • Significant Advantages:
  • Achieves Zero-Voltage Switching (ZVS) for primary switches, drastically reducing switching losses.

    Employs frequency modulation for wide input/output voltage regulation.

    Requires precise dead-time control for optimal operation.


‌‌‌(B) Critical Power Device Selection

Secondary Rectification Diode Technologies:‌

  • Silicon Carbide Diodes (SiC Schottky):‌
  • Voltage ratings: 600V-1200V. Near-zero reverse recovery time (<20ns), e.g., SMC S3D series.

    Ideal for high-frequency LLC topologies. In a 500W design, they can improve efficiency by ~2%, albeit at 3-5x the cost of silicon diodes.

  • Ultra-Fast Recovery Diodes (Si):‌
  • Reverse recovery times: 50ns-100ns.

    Commonly used for secondary rectification in Forward converters.

    EMI concerns arise from reverse recovery current; implementation with RC snubbers is recommended.

  • ‌Silicon Schottky Diodes:‌
  • Preferred for low-voltage, high-current outputs (e.g., 12V/5V rails), e.g., SMC MBR20200CT.

    Offer low forward voltage drop (0.3V-0.6V).

    Voltage ratings typically limited to <200V.


Transient Protection Design (TVS Selection & Application):‌

TVS diode selection must adhere to:

  • Breakdown Voltage (VBR) ≥ 1.2 x Maximum Circuit Operating Voltage.
  • Power rating calculated based on 10/1000μs surge waveform (e.g., 1.5KE440A common on 500W input stage).
  • Critical placement: Mount as close as possible to the protected device, with lead lengths < 5cm.

‌‌‌‌‌Primary Application Scenarios:

  • AC Input:‌ Bi-directional TVS across L-N to suppress surges (e.g., 6kV Combination Wave tests per IEC 61000-4-5).
  • ‌MOSFET Protection:‌ Uni-directional TVS connected Drain-to-Source to prevent voltage breakdown.
  • ‌Output Protection:‌ TVS across output terminals to clamp voltage during load dump events.

Market Outlook Analysis

Key Demand Drivers:‌

  • Replacement cycles for industrial automation equipment power supplies (average 5-7 years).
  • ‌oGrowing demand for distributed power units in 5G base stations.
  • ‌oExpansion in auxiliary power requirements within new energy sectors (e.g., EV charging stations).

Technology Trends:‌

  • Digital control adoption (using DSPs) projected to rise from ~30% to 50%, displacing traditional PWM ICs.
  • ‌oWide Bandgap (WBG - SiC/GaN) device penetration forecast to reach ~25% by 2025.
  • ‌oIncreasing shift towards modular designs to reduce customer Bill of Materials (BOM) management complexity.

Competitive Landscape:‌

  • Dominated by tier-one players (e.g., Delta, Mean Well) in the high-end segment.
  • ‌oDomestic Chinese manufacturers (e.g., Moso Power) gaining share in the mid-range via cost-performance strategies.
  • ‌oRegulatory certification barriers (UL 60601 / EN/IEC 62368) remain a significant challenge for new entrants.

The advantages of SMC

SMC, as a globally leading power semiconductor device manufacturer with nearly 30 years of history, can provide customers with the most advanced, efficient, and cost-effective third-generation silicon carbide MOSFETs and silicon carbide JBS diodes. In addition, SMC has unique experience in silicon-based power diode devices, and its best-selling high-power ultra-fast recovery diodes, high current Schottky diodes, and other products are highly praised by customers worldwide. SMC's power semiconductor devices can provide higher efficiency, better reliability, good delivery time, and competitive prices for your products. SMC's professional service team around the world allows you to experience the ultimate customer service experience and safeguard your product design.

 

No. Block Suggested Product Family Suggested Part Number
1 Active PFC Booster SiC Diodes S3D03065L
S2D04065E
S3D04065L
S3D03065T
S3D04065M
S3D03065A
S3D03065E
S3D03065I
S3D03065F
Ultra Fast Recovery Diodes SDURF660
SDUR860
SDURD860
SDURB860
SDURB860A
SDURF860
SDURD860A
2 DC/DC Converter Schottky Rectifiers ST1560C
STF1560C
STF1560CR
STD1560C
STB1560C
STD1560
STB1560
ST1560
STF1560
ST15100
STF15100
STB15100
STD15100
STD15100C
ST15100C
STF15100C
STB15100C
ST15100S
SiC Diodes S4D02120A
S4D02120E
S4D02120F
S4D02120T
S4D02120G0
S6D02065A
S6D02065E
3 Main Control unit TVS SMF8.0CA
SMF10CA
P4SMF5.0A
P4SMF7.0A
P4SMF8.0A
P4SMF5.0CA
P4SMF7.0CA
P4SMF8.0CA
P4SMF10CA
SMF7.0A
SMF8.0A
SMF10A
4 Power Management Schottky Rectifiers SS28AF
SS210AF
DSS28U
DSS210U
SK210A
SL210A
SK28
SK210
DSS210
DSS28
20CJQ100
SB2100
SK310A
SK38BF
SK310BF
SK310B
30BQ100
SK38
SK310
MBRD380
MBRD3100
SB3100
DSS38
DSS310
SS28A
SS210A
SS38AF
SS310AF
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