Applications




‌Comprehensive Technical and Market Analysis of 30kW-40kW Automotive Charging Modules

Working Principle

The 30kW-40kW charging module, serving as the core unit of a DC fast-charging system, operates based on high-frequency power electronic conversion technology. When AC grid input (typically three-phase 380V AC) is connected to the module, it first passes through an EMI filter circuit to eliminate high-frequency interference. Subsequently, a three-phase PWM rectifier converts the AC into a stable intermediate DC bus voltage (typically 500-750V DC). This stage employs Space Vector Modulation (SVM) technology to achieve a high power factor (>0.99) and low total harmonic distortion (THD <5%).
The intermediate DC voltage undergoes secondary conversion via an LLC resonant converter or Dual Active Bridge (DAB) topology. A high-frequency transformer (operating typically in the 50kHz-150kHz range) provides electrical isolation and voltage regulation. The output stage utilizes a multi-phase interleaved parallel Buck/Boost circuit, integrated with a digital PID controller, to implement Constant Current (CC)/Constant Voltage (CV) charging mode switching. The entire system, controlled by a DSP+FPGA digital control platform, monitors Battery Management System (BMS) communication data (via CAN bus or PLC) in real-time. It dynamically adjusts output parameters to meet the step-charging curve requirements of lithium batteries.

Topology Architecture‌‌

Front-stage AC/DC Conversion Architecture:‌

The mainstream solution employs either a VIENNA Rectifier or T-type three-level topology. Compared to traditional two-level structures, this reduces voltage stress on switching devices by 70%, increasing efficiency to over 96%. The application of Silicon Carbide (SiC) MOSFETs reduces switching losses by 40%, enabling the module to operate at full power in ambient temperatures up to 65°C.

Isolated DC/DC Conversion Architecture:‌

A hybrid LLC-DAB topology is prevalent in this medium-power range. The LLC handles high-efficiency energy transfer (90%-100% load), while the DAB achieves wide-range voltage regulation (200V-1000V) through phase-shift control. This architecture achieves a peak efficiency of 98.2% in 30kW modules, with ripple current controlled within ±2% of the rated value.

‌Thermal Management Subsystem:‌

A layered liquid-cooling design is employed. Power devices are directly soldered onto copper substrates, with micro-channel cold plates enabling heat dissipation capabilities exceeding 30W/cm² heat flux density. An intelligent hybrid air-liquid cooling system automatically switches modes based on load rate, allowing the module to achieve a volumetric power density surpassing 25kW/dm³.

‌Intelligent Control System:‌

A Model Predictive Control (MPC)-based dynamic energy allocation algorithm supports parallel operation with up to 16 modules (current imbalance <3%). An integrated AI failure prediction model analyzes over 10,000 sensor data points to provide failure warnings up to 72 hours in advance.

Market Outlook

The global medium-power charging module market is expanding at a Compound Annual Growth Rate (CAGR) of 23.8%, with an estimated market size of US$24 billion by 2030. Driven by China's "New Infrastructure" policy, the penetration rate of 30kW-40kW modules in scenarios like bus depots and logistics parks already exceeds 35%. In the European market, spurred by public charging station subsidies, demand for this power range products is growing annually at 41%.
Procurement preferences show distinct regional variations: The North American market favors modular designs (supporting N+1 redundancy), the Asia-Pacific region prioritizes cost-effectiveness (requiring <$0.12/W), and Europe mandates compliance with the VDE-AR-E 2059-4-1 safety standard. Notably, integrated solar-storage-charging (S2G2V) solutions are driving increased adoption of bidirectional charging modules (V2X), projected to capture 25% market share by 2027.

Development Trends

‌Material Innovations:

The commercialization of Gallium Oxide (Ga₂O₃) devices will push module efficiency beyond the 99% threshold. Combined with superconducting magnetic energy storage (SMES) technology, this could reduce charging times by 30%.

‌Architecture Evolution:‌

Digital twin-based distributed control architectures will gradually replace centralized systems, enabling individual modules to autonomously perform functions like grid demand response and load forecasting.

Standardization:‌

Convergence between the ChaoJi charging standard and CCS2 will drive globally universal designs for 30kW-40kW modules, reducing adapter costs by 30%.

Intelligence Upgrade:‌

Blockchain technology will be applied to charging transaction settlement, with built-in smart contracts enabling seamless payment and automatic carbon credit conversion.

‌Extreme Environment Adaptation:‌

Next-generation military-grade protection (IP68 & MIL-STD-810H compliance) will ensure stable module operation in environments ranging from -40°C to +85°C, facilitating adoption in specialized applications like polar research.

The advantages of SMC

SMC, as a globally leading power semiconductor device manufacturer with nearly 30 years of history, can provide customers with the most advanced, efficient, and cost-effective third-generation silicon carbide MOSFETs and silicon carbide JBS diodes. In addition, SMC has unique experience in silicon-based power diode devices, and its best-selling high-power ultra-fast recovery diodes, high current Schottky diodes, and other products are highly praised by customers worldwide. SMC's power semiconductor devices can provide higher efficiency, better reliability, good delivery time, and competitive prices for your products. SMC's professional service team around the world allows you to experience the ultimate customer service experience and safeguard your product design.

 

No. Block Suggested Product Family Suggested Part Number
1 Active PFC Booster SiC Diodes S4D40120D
S4D40120H
S5D40120D
S4D80120S2
S4D40120F
S4D40120F
S4D60120D
S3D50065D1
S3D50065G
S3D50065H
S3D60065H2
S3D50065F
S3D60065A
Ultra Fast Recovery Diodes SDUR6060W
SDUR6060WT
SDUR60Q60W
SDUR60Q60WT
SDUR8060W
SDUR60U120W
SDUR60P60WT
SDUR60H60W
SDUR60FU60W
SDUR60F60W
SDUR75H60W
SDUR60H120W
SiC MOSFETs S3M0016120K
S3M0016120N
S3M0016120D
S3M0025120D
S3M0025120J
S3M0016120B
S3M0025120K
S3M0025120B
S2M0016120D
S2M0016120D-1
S2M0016120K
S2M0016120K-1
S2M0016120N
S2M0025120D
S2M0025120J
S2M0025120K
S2M0025120N
S3M0025120N
S2M0025120F
S3M0025120T
S3M0030120J
S3M0012120K
S3M0030120K
2 DC/DC Converter SiC Diodes S3D50065D1
S3D50065G
S3D50065H
S4D80120S2
S3D60065H2
S3D50065F
S3D60065A
S4D60120D
SiC MOSFETs S3M0016120K
S3M0016120N
S3M0016120D
S3M0025120D
S3M0025120J
S3M0016120B
S3M0025120K
S3M0025120B
S2M0016120D
S2M0016120K
S2M0025120D
S2M0025120J
S2M0025120K
S2M0025120N
S3M0025120N
S2M0025120F
S3M0025120T
S3M0030120J
S3M0012120K
S3M0030120K
3 Main Control unit TVS SMAJ5.0CA-L
P4SMF5.0A
P4SMF7.0A
P4SMF8.0A
SMAJ5.0CA
SMAJ7.0A
SMAJ7.0CA
SMAJ8.0A
SMAJ8.0CA
SMF5.0CA
SMF7.0CA
SMF8.0CA
SMAJ5.0A
P4SMF5.0CA
P4SMF7.0CA
P4SMF8.0CA
SMF5.0A
SMF7.0A
SMF8.0A
4 Power Management Schottky Rectifiers SK36BF
SK36B
30BQ060
SK33
SK36
MBRD330
MBRD360
MBR330FL
SK56B
SL53
SK56
MBRD560
MBR560S
MBRF560L
DSS33
DSS36
SK33B
SS33AF
SS36AF
Top